Capacitor with 2 floating gates

In summary, the conversation is discussing a theoretical setup where a capacitor of size C Farad is connected between nodes A and B and loaded with a specific charge. The nodes are then disconnected, and charges are injected on both sides. The question is whether the excess charges will recombine and what the voltage across the capacitor will be. The conversation also mentions ideal NMOS switches and the effect of a Gaussian box on the surface charge density. The voltage is determined by the integral of the E field, which is constant between the A and B plates due to the absence of free charge in the air space.
  • #1
divB
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Hi,

I have the following theoretic setup:

A cap of size C Farad is connected between nodes A and B and loaded with a specific charge (e.g. +10 on side A, -10 on side B).

In the next step, i disconnect side B and before doing that, "magically" (see footnote) a charge of -3 gets injected on plate B. Since node A is not (yet) floating, it will supply a charge of +3 and the cap is loaded with +/-13 charges now. Node B is floating now (not connected to anywhere).

Now I so the same with with node A: -3 charges get injected and then the node is disconnected (floating).

At node A, there are now +10 charges (+13 and -3) and on side B -13 chages. Since both nodes are floating, no node can supply charges to get the thing in equilibrium.

First of all, at node A, will the three electrons (-3) "recombine" with 3 of the +10 positive charges or not?

What is the voltage across the cap?

I assume that on one side, excess charge will move as far away as they can (to a hypothetic other cap plate) because the cap requires same absolute charges on both sides.

Thanks
divB

footnote: The setup are ideal NMOS switches which have a certain charge (-6 in the example above) in the channel. When the MOS switches infinitely fast from on to off, about -3 charges will go to one side and -3 charges will be injected at the cap plates.
 
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  • #2
By running a Gaussian box between the two plates such that the box ends are inside both plates, that tells you that the surface charge density on the two facing sides must be equal. I think you concluded that already.

There will therefore be extra negative charge on the outside surface of the negatively charged plate.

The voltage is the integral of the E field over the plate separation distance. What is the formula for the E (or D) field near a charged conducting surface? (Since there is no free charge in the air space between the plates, so div E = 0, the E field is constant all the way from the A to the B plate.)
 
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FAQ: Capacitor with 2 floating gates

What is a capacitor with 2 floating gates?

A capacitor with 2 floating gates is a type of capacitor used in electronic circuits. It consists of two conductive plates separated by a dielectric material, with two additional floating gates placed between the two plates.

How does a capacitor with 2 floating gates work?

A capacitor with 2 floating gates works by storing electric charge on its two plates, which are separated by the dielectric material. The two floating gates help to increase the capacitance of the capacitor, allowing it to store more charge.

What are the advantages of using a capacitor with 2 floating gates?

One advantage of using a capacitor with 2 floating gates is that it has a higher capacitance compared to a regular capacitor, allowing it to store more charge. It also has a smaller physical size, making it useful for compact electronic devices.

What are the applications of a capacitor with 2 floating gates?

A capacitor with 2 floating gates is commonly used in memory circuits, such as in dynamic random-access memory (DRAM) and flash memory. It is also used in analog circuits, signal processing, and power supplies.

What are the limitations of a capacitor with 2 floating gates?

One limitation of a capacitor with 2 floating gates is that it is more complex and expensive to manufacture compared to a regular capacitor. It also has a lower breakdown voltage, making it more susceptible to damage from high voltage. Additionally, it can experience charge leakage over time, leading to data loss in memory circuits.

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