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msPhysics
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Homework Statement
I would like to calculate the misfit strain on InP and InGaAs when InGaAs is grown on InP
Homework Equations
lattice constants for InP , a1= 5.8687 InGaAs a2=5.7455 ( with 25% In)
The Attempt at a Solution
I have calculated the lattice mismatch ratio as -1.94% , from lattice mismatch = (a2-a1)/a1
I understand that as lattice constant of InGaAs at this composition is smaller than InP InGaAs is under tension and InP is under compression.
I don't know how can I use the lattice mismatch to calculate these strains (compression on InP and tension on InGaAs)
I have read somewhere that misfit strain is just the lattice mismatch ratio with sign change. Is that true?