- #1
BPHH85
- 30
- 8
Hi
Carriers injected in the conduction band of a bulk semiconductor, either by optical or by electrical injection, are relaxing to the lowest free states near the band edge by transmitting their excess energy and momentum to phonons before they recombine with holes in the valence band. This is fine for me. However, I don't know if this is the same situation for a quantum well with its discrete subband structure. Regarding a single electron diffusing and scattering from the barriere states in the quantum well, how would the transfer path look like until the electron will occoupy a state in the lowest energy subband? Is there also a k-selection rule to consider for intersubband transitions?
Maybe I'm searching for the wrong key points, but so far a have not found a satisfying explaination for this process. I would be grateful if someone could explain the process for me.
Best regards
Carriers injected in the conduction band of a bulk semiconductor, either by optical or by electrical injection, are relaxing to the lowest free states near the band edge by transmitting their excess energy and momentum to phonons before they recombine with holes in the valence band. This is fine for me. However, I don't know if this is the same situation for a quantum well with its discrete subband structure. Regarding a single electron diffusing and scattering from the barriere states in the quantum well, how would the transfer path look like until the electron will occoupy a state in the lowest energy subband? Is there also a k-selection rule to consider for intersubband transitions?
Maybe I'm searching for the wrong key points, but so far a have not found a satisfying explaination for this process. I would be grateful if someone could explain the process for me.
Best regards