- #1
kthouz
- 193
- 0
Hello everybody!
I was studying stuff about transistor and i got stuck somewhere. In lecture they said that The common emitter is the more likely configuration used to amplify signals because it produces more power than other configurations. But when i tried to understand it clearly if found that in a common emitter configuration the input base current Ib is multiplied by [tex]\beta[/tex] (the current gain factor) to give an output collector current Ic=[tex]\beta[/tex]Ib while as far as common collector configuration concerned, the input base current is multiplied by (1+[tex]\beta[/tex]) giving an output emitter current Ie=(1+[tex]\beta[/tex])Ib. As we know the power is directly dependent on the current (P=UI), so i can conclude saying that the power due to a common collector configuration is higher than the one due to a common emitter configuration since the Ie=(1+[tex]\beta[/tex])Ib[tex]\geq[/tex]c=[tex]\beta[/tex]Ib . Am I right?
I was studying stuff about transistor and i got stuck somewhere. In lecture they said that The common emitter is the more likely configuration used to amplify signals because it produces more power than other configurations. But when i tried to understand it clearly if found that in a common emitter configuration the input base current Ib is multiplied by [tex]\beta[/tex] (the current gain factor) to give an output collector current Ic=[tex]\beta[/tex]Ib while as far as common collector configuration concerned, the input base current is multiplied by (1+[tex]\beta[/tex]) giving an output emitter current Ie=(1+[tex]\beta[/tex])Ib. As we know the power is directly dependent on the current (P=UI), so i can conclude saying that the power due to a common collector configuration is higher than the one due to a common emitter configuration since the Ie=(1+[tex]\beta[/tex])Ib[tex]\geq[/tex]c=[tex]\beta[/tex]Ib . Am I right?