Donor and Acceptor Concentrations in a Si speciment

In summary, on the left side of the junction, there is the n-side and on the right side, there is the p-side. There is some confusion about the concentrations $N_D$ and $N_A$ on the n-side. The Ga and As atoms do interact, so $N_D = 2*10^{16} \text{cm}^{-3}$ is the correct concentration. This means that there are both donor and acceptor dopant atoms present on the n-side, with a total concentration of $4*10^{16} \text{cm}^{-3}$.
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Homework Statement
Suppose that we have a Si speciment and there are Ga atom impurities of $2*10^{16} \text{cm}^{-3} $.`Then, at the left side we insert As impurity atoms of $4*10^{16} \text{cm}^{-3}$. A pn junction is created. What are $N_D$ and $N_A$ at each side of the junction?
Relevant Equations
$$n = \vert{N_D - N_A}\vert$$
At the left side we have the n-side of the junction, whereas at the right we have the p-side. I am a little confused over $N_D$ and $N_A$ at the n-side. Do the Ga atoms interact with the As ones, so we have $N_D = 2*10^{16} \text{cm}^{-3}$, or not, ans thus we have $N_A=2*10^{16} \text{cm}^{-3}$ and $N_D = 4*10^{16} \text{cm}^{-3}$ ?
 

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The Ga and As atoms do interact, so $N_D = 2*10^{16} \text{cm}^{-3}$ is correct. This means that there are two different types of dopant atoms on the n-side, one type is donors and the other is acceptors. The total concentration of dopants is then $N_D + N_A = 4*10^{16} \text{cm}^{-3}$.
 

FAQ: Donor and Acceptor Concentrations in a Si speciment

What are donor and acceptor concentrations in a Si specimen?

Donor and acceptor concentrations refer to the number of impurities, such as phosphorus and boron, that are intentionally added to a silicon (Si) specimen to create n-type and p-type semiconductors, respectively.

How do donor and acceptor concentrations affect the conductivity of a Si specimen?

The presence of donor and acceptor impurities in a Si specimen creates free electrons and holes, respectively, which increase the conductivity of the material. Higher concentrations of impurities result in higher conductivity.

How are donor and acceptor concentrations measured in a Si specimen?

Donor and acceptor concentrations can be measured using techniques such as Hall Effect measurements, which measure the electrical properties of a material and can determine the type and concentration of impurities present.

What is the relationship between donor and acceptor concentrations in a Si specimen?

The relationship between donor and acceptor concentrations in a Si specimen is known as the doping ratio. This ratio determines the overall electrical properties of the material, such as its conductivity and type (n- or p-type).

How do donor and acceptor concentrations impact the performance of electronic devices?

The presence of controlled donor and acceptor concentrations in a Si specimen is essential for the proper functioning of electronic devices, such as transistors and diodes. These impurities allow for the manipulation of electrical current and voltage, making it possible for these devices to perform their intended functions.

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