Effect of TRS potential on Topological insulator (QSH)

In summary, the conversation discusses the phenomenon of a topological insulator being robust against a potential that does not break the time reversal symmetry. However, in the original work of Kane-Mele, it was found that a "staggered sublattice potential" that also does not break this symmetry can make a zigzag ribbon into a trivial insulator. This is due to the potential being able to open a gap, causing a phase transition and closing the gap at the Dirac points. The Haldane model is mentioned as a similar example, with the staggered sublattice potential competing with the Haldane mass term. Overall, the conversation touches on the concept of robustness of the topological insulator phase against interactions.
  • #1
mohsen2002
19
0
Hi every body,

I faced a paradox. The topological insulator is robust against a potential that does not breaks the TRS.
But in the original work of Kane-Mele (PRL 95, 146802), the "staggered sublattice potential" that does not breaks the TRS,, makes zigzag ribbon trivial insulator (figure 1 in the PRL).
Is there any explanation?
 
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  • #2
The staggered sublattice potential can open a gap. Think of boron nitride. Because the A and B sublattice are in equivalent so it is gapped. If the gap becomes large enough in the QSHE we have a phase transition, the gap closes and are now not inverted so we have a trivial insulator. So there can be a staggered sublattice potential but at a critical value it will close the gap due to spin orbit and the system becomes a trivial insulator.

Also think of the Haldane model. The Kane mele model is just two copies of the Haldane model, one for each spin. The sigma z term in the Haldane model is proportional to a Haldane mass, and there is a region where you can have a chiral edge state also due to the gap closing and reopening.
 
  • #3
Thank you for your reply. I can understand the gap, but is it match with our expectation of robustness of TI phase against interactions?
 
  • #4
A correction to the above, the Haldane mass is actually proportional to sigma z Sz. In the QSHE this mass would correspond to sigma z tau z s z. The staggered sublattice potential is just proportional to sigma z and produces the gap of the same size at K and K'

The Haldane mass is a different kind of mass term than from the sublattice potential as it introduces gaps of opposite signs at the points K and K' (location of the Dirac points in graphene). If the sublattice potential is too large, the bands will not invert since the gaps at K and K' will have the same sign even with the Haldane mass. The transition comes when the gap closes. So basically they are competing.

Usually when you think of interactions in the QSHE, you could think of something like an impurity somewhere or something that could cause backscattering. If such a thing does not break time reversal, backscattering cannot happen since the states are chiral.
 
  • #5
Thank you so much for helpful discussion and your time.
 

FAQ: Effect of TRS potential on Topological insulator (QSH)

What is a Topological insulator (QSH)?

A Topological insulator (QSH) is a type of material that exhibits insulating behavior in its bulk while having conducting states on its surface. These conducting states are protected by time-reversal symmetry (TRS) and are known as quantum spin Hall (QSH) states.

How does TRS potential affect a Topological insulator?

TRS potential is a critical factor in determining the properties of a Topological insulator. It breaks the symmetry of the material and can lead to a transition from a topologically non-trivial state to a trivial state. This transition is known as a topological phase transition and can be controlled by varying the strength of the TRS potential.

What techniques are used to study the effect of TRS potential on Topological insulators?

Several experimental techniques can be used to study the effect of TRS potential on Topological insulators. These include angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and transport measurements such as the magneto-resistance and the Hall effect.

What are the potential applications of the effect of TRS potential on Topological insulators?

The effect of TRS potential on Topological insulators has potential applications in spintronics, quantum computing, and energy-efficient electronics. These materials can also be used for topological quantum devices, such as topological transistors and topological memory devices, due to their unique conducting properties.

Are there any current research developments in the study of TRS potential on Topological insulators?

Yes, there is ongoing research in this field to further understand the effect of TRS potential on Topological insulators. Scientists are investigating new materials and techniques to enhance the control and manipulation of these materials for potential technological applications.

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