Electron Bands in 2D Semiconductor

  • #1
StochasticHarmonic
1
1
Homework Statement
The given energy dispersion is:
\begin{equation}
E(p) =
\begin{cases}
-p^2/2m_v & \text{if } E \leq 0 \\
p^2/2m_c+\Delta & \text{if } E > 0
\end{cases}
\end{equation}
Where ##m_c## and ##m_v## are the effective masses of the conduction and valence band electrons.

Part A begins with derivation of the energy dependent DOS, which is fairly simple to find using the 2D density of states relation:
\begin{equation}
\frac{2}{\pi^2 \hbar} \frac{d^2 p}{dE} = D(E)
\end{equation}
to be:
\begin{equation}
D(E)=\{\begin{array}{cc}\frac{m_v}{\pi \hbar^2 },&\mbox{ if } E\leq 0\\ \frac{m_c}{\pi \hbar^2 }, & \mbox{ if } E>\Delta\end{array}
\end{equation}
Then for part b we use the fact that the total number of electrons are fixed:

\begin{equation}
\int_{E_F}^{\infty} f(E)D(E) \, dE = \int^{E_F}_{-\infty} (1-f(E))D(E) \, dE
\end{equation}
To derive the equation:
\begin{equation}
-\beta m_c E_D+m_c ln[1+e^{-\beta(\mu-\Delta)}]=m_vln[1+e^{- \beta \mu}]
\end{equation}
Which gives us a relation for our chemical potential.

My Question comes from the following qualitative question: Assume the semiconductor is intrinsic, where ##E_D=0##, or the valence band is filled and conduction band empty at T=0, How does the chemical potential change with increasing temperature for ##m_c>m_v##?
Relevant Equations
When ##E_D=0##, equation 5 becomes:

\begin{equation}
m_c ln[1+e^{-\beta(\mu-\Delta)}]=m_vln[1+e^{- \beta \mu}]
\end{equation}
Question is stated below:
In the questions solution, they conceptually discuss how the DOS for the conduction band becomes larger when ##m_c## is larger than ##m_v##. This then implies that there is "more phase space for electrons than holes", which confuses me. How can you make a statement about the phase space of electrons based only on the conduction band DOS being larger than the valence band DOS?

They go on to make another few statements which confuse me; "at finite temperature the holes must spread wider in energy compared to electrons. This means that with increasing temperature, the half-filled state must shift down in energy so the Boltzmann Tail of the distribution |E-mu|>>T has larger overlap with the valence band."

If anyone could provide some clarity on this conceptually, that would be extremely beneficial. I'm confused on how the conduction band DOS is proportional to the phase space of the electrons, and I'm also confused on what the half filled state is, and also why the holes energy spreads out with finite temperature.

Thank you.
 
Last edited:

FAQ: Electron Bands in 2D Semiconductor

What are electron bands in 2D semiconductors?

Electron bands in 2D semiconductors refer to the allowed and forbidden energy levels that electrons can occupy in a two-dimensional material. These bands arise from the quantum mechanical behavior of electrons confined in two dimensions, leading to distinct electronic properties that differ from three-dimensional semiconductors. The two primary bands are the valence band, which is filled with electrons, and the conduction band, which is typically empty at absolute zero temperature.

How do electron bands affect the electrical properties of 2D semiconductors?

The arrangement and spacing of electron bands in 2D semiconductors significantly influence their electrical properties, including conductivity, mobility, and bandgap. A smaller bandgap allows for easier electron excitation from the valence band to the conduction band, resulting in higher conductivity. Conversely, larger bandgaps can make materials more insulating. The unique band structure in 2D materials also facilitates phenomena like quantum Hall effects and tunable electronic properties through external fields.

What is the significance of the bandgap in 2D semiconductors?

The bandgap in 2D semiconductors is crucial as it determines the material's electronic and optical properties. A direct bandgap allows for efficient light absorption and emission, making these materials suitable for optoelectronic applications such as lasers and photodetectors. In contrast, an indirect bandgap may limit these functionalities. The ability to engineer the bandgap through methods like strain or chemical doping is also significant for tailoring material properties for specific applications.

How can the electron band structure of 2D semiconductors be experimentally determined?

The electron band structure of 2D semiconductors can be experimentally determined using techniques such as angle-resolved photoemission spectroscopy (ARPES), which provides information about the energy and momentum of electrons in the material. Other methods include scanning tunneling microscopy (STM) and optical spectroscopy, which can probe the electronic states and transitions associated with the band structure. These techniques allow researchers to visualize and understand the electronic properties of 2D materials.

What are some common examples of 2D semiconductors and their band characteristics?

Common examples of 2D semiconductors include graphene, transition metal dichalcogenides (TMDs) like MoS2 and WS2, and black phosphorus. Graphene has a zero bandgap and exhibits unique conductive properties, while TMDs typically have a direct bandgap that can be tuned by changing the number of layers. Black phosphorus has a tunable bandgap that varies with the number of layers, making it versatile for various electronic and optoelectronic applications.

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