Electron encountering metal surface (1D Step potential)

In summary: I agree ##E>0##; to be clear, I was trying to show in this part of the solution (it's not a complete solution yet) why ##E<0## is impossible since it's not excluded on the basis of e.g. Hermitian operators having real eigenvalues a...an.
  • #1
EE18
112
13
Homework Statement
Ballentine Problem 4.3 (which I am self-studying) gives is as follows:

The simplest model for the potential experienced by an electron at the surface of a metal is a step: ##W(z) = —V_0 for z < 0 ## (inside the metal) and ##W(z) =0 for z > 0## (outside the metal). For an electron that approaches the surface from the interior, with momentum ##\hbar k## in the positive ##x## direction, calculate the probability that it will escape.
Relevant Equations
$$-\frac{h^2}{2M}\frac{d^2\psi}{dx^2} + W\psi = E\psi \implies -\frac{h^2}{2M}\frac{d^2\psi}{dx^2} = (E-W)\psi$$
I am struggling with how to go about this; in particular, I'm not sure I understand what state is being alluded to when Ballentine says "For an electron that approaches the surface from the interior, with momentum ##\hbar k## in the positive ##x## direction, calculate the probability that it will escape." Presumably I am supposed to find some eigenstate of ##H## here, but am I to take a state with ##E>|V_0|## or ##E<|V_0|##? I would imagine we're interested in a bound state (so ##-V_0<E<0##)?
 
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  • #2
You should probably consider both cases. You will find that the probability is 0 if ##E<0## as you may intuitively expect.
 
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  • #3
vela said:
You should probably consider both cases. You will find that the probability is 0 if ##E<\lvert V_0 \rvert## as you may intuitively expect.
I see; how then is this a model for a surface of a metal when in general the electron states in a metal are bound?
 
  • #4
Can you solve the Shrodinger Equation for a finite step potential at x=0? There are no "bound" (localized) states per se. There are states that fill the solid (for E<0) and states that fill all space (for E>0). For the latter states you can find define the Transmission and Reflection asymptotically for large negative and positive z
 
  • #5
hutchphd said:
Can you solve the Shrodinger Equation for a finite step potential at x=0? There are no "bound" (localized) states per se. There are states that fill the solid (for E<0) and states that fill all space (for E>0). For the latter states you can find define the Transmission and Reflection asymptotically for large negative and positive z
I have this so far and will continue on. Does this seem like a reasonable argument for excluding the $E<0$ possibility rigorously?

Screen Shot 2023-03-27 at 2.16.27 PM.png
 
  • #6
EE18 said:
I see; how then is this a model for a surface of a metal when in general the electron states in a metal are bound?
If you're assuming the electron is bound, then by assumption it can't escape.

You might imagine a case where the metal is hot enough so that some fraction of the electrons have enough thermal energy to escape if they reach the surface.
 
  • #7
vela said:
If you're assuming the electron is bound, then by assumption it can't escape.

You might imagine a case where the metal is hot enough so that some fraction of the electrons have enough thermal energy to escape if they reach the surface.
I see, that makes sense -- thank you! I am so used to seeing artificial ground state textbook cases in solid state physics texts that I didn't think of that.
 
  • #8
EE18 said:
I have this so far and will continue on. Does this seem like a reasonable argument for excluding the $E<0$ possibility rigorously?
Your solution for ##x<0## (you mistakenly said ##x>0## again for the second case) is wrong. Also, the only time you're going to get discontinuities in ##\psi'## is when you have some sort of potential involving an infinity, which you don't have here. You want to construct a solution where ##\psi## and ##\psi'## are continuous at ##x=0##.
 
  • #9
vela said:
Your solution for ##x<0## (you mistakenly said ##x>0## again for the second case) is wrong. Also, the only time you're going to get discontinuities in ##\psi'## is when you have some sort of potential involving an infinity, which you don't have here. You want to construct a solution where ##\psi## and ##\psi'## are continuous at ##x=0##.
Sorry for not being clear, you are right re ##x>0##. In general, my strategy was to give a solution for ##x>0## and show that it could not be stitched together with the ##x<0## solution in such a way as ##\psi'## was continuous. Is that correct? Also why is my (intended) ##x<0## solution wrong?
 
  • #10
OMG. Why would you redefine the potential halfway through the problem. Please use LateX and start again if you want help here..... There are no bound states. Scattering from a potential step is treated in almost every textbook.
 
  • #11
EE18 said:
Sorry for not being clear, you are right re ##x>0##. In general, my strategy was to give a solution for ##x>0## and show that it could not be stitched together with the ##x<0## solution in such a way as ##\psi'## was continuous. Is that correct? Also why is my (intended) ##x<0## solution wrong?
Oh, I didn't notice you redefined the potential. With the new potential, you have to have ##E>0##. That should make clear why your ##x<0## solution is wrong.
 
  • #12
vela said:
Oh, I didn't notice you redefined the potential. With the new potential, you have to have ##E>0##. That should make clear why your ##x<0## solution is wrong.
I agree ##E>0##; to be clear, I was trying to show in this part of the solution (it's not a complete solution yet) why ##E<0## is impossible since it's not excluded on the basis of e.g. Hermitian operators having real eigenvalues a priori.
 

FAQ: Electron encountering metal surface (1D Step potential)

What is a 1D step potential in the context of an electron encountering a metal surface?

A 1D step potential is a simplified model used in quantum mechanics to describe the potential energy change an electron experiences when it encounters a metal surface. In this model, the potential energy is constant on either side of a boundary but changes abruptly at the boundary, resembling a step. This helps in understanding phenomena like reflection and transmission of electrons at the interface.

How is the wave function of an electron affected when it encounters a 1D step potential?

When an electron encounters a 1D step potential, its wave function can be split into reflected and transmitted components. For an electron approaching the step from a region of lower potential, part of the wave function is reflected back, and part of it is transmitted into the region of higher potential. The exact form of the wave function depends on the energy of the electron relative to the height of the step potential.

What is the significance of the reflection and transmission coefficients in this scenario?

The reflection and transmission coefficients quantify the probabilities of the electron being reflected back or transmitted through the step potential. These coefficients are determined by solving the Schrödinger equation with appropriate boundary conditions at the step. They provide insights into how likely the electron is to penetrate the metal surface or be reflected back.

How do you calculate the reflection and transmission coefficients for an electron encountering a 1D step potential?

The reflection (R) and transmission (T) coefficients are calculated by matching the boundary conditions of the wave functions at the step potential. This involves ensuring continuity of the wave function and its derivative at the boundary. The coefficients are given by the ratios of the amplitudes of the reflected and transmitted waves to the incident wave. Mathematically, R and T can be derived using the Schrödinger equation and the properties of the potential step.

What physical phenomena can be explained by studying electrons encountering a 1D step potential?

Studying electrons encountering a 1D step potential helps in understanding various quantum mechanical phenomena such as tunneling, reflection, and transmission at interfaces. This model is particularly useful in the analysis of electronic behavior in semiconductor devices, surface physics, and the design of quantum wells and barriers in nanotechnology. It provides a foundational understanding of how electrons interact with potential energy changes at material boundaries.

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