Etching TiO2 on Silicon Substrates: Suggestions Needed

Overall, it seems like you have done thorough research and have a solid plan for etching TiO2. Good luck with your project! In summary, it is possible to etch TiO2, MgF2, and Cr2O3 onto a silicon substrate with a top pattern of TiO2 using E-beam transfer and PMMA photoresist. The suggested etchant is hydrogen peroxide + sodium carbonate, but hydrofluoric acid can also be used with caution. Other photoresists such as SU-8 or AZ1518 may be more compatible with the etchant. The outlined fabrication process appears to be appropriate for etching TiO2.
  • #1
Charlieviolet
1
0
Hi guys,

Please give me some suggestions about etching TiO2

TiO2, MgF2, and Cr2O3 are sputtered on silicon substrate. The top pattern is TiO2 with the

linewidth of 346nm. I would use E-beam to transfer pattern. The photoresist is PMMA.

The possible etchant I have searched for is hydrogen peroxide + sodium carbonate.

Is the fabrication process appropriate?

thanks a lot
 
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  • #2
.Yes, the fabrication process you have outlined is appropriate for etching TiO2. You can also use hydrofluoric acid (HF) for etching TiO2. However, be aware that HF is a very hazardous chemical and should be handled with extreme caution. Additionally, you may want to consider using a different photoresist, such as SU-8 or AZ1518, as they are more compatible with the etchant.
 

FAQ: Etching TiO2 on Silicon Substrates: Suggestions Needed

What is the purpose of etching TiO2 on silicon substrates?

Etching TiO2 on silicon substrates is a common process used in the production of semiconductor devices. It allows for the creation of precise patterns and structures on the silicon surface, which can help improve the performance and functionality of the devices.

What are some suggested methods for etching TiO2 on silicon substrates?

Some suggested methods for etching TiO2 on silicon substrates include wet etching, dry etching, and plasma etching. Each method has its own advantages and disadvantages, and the choice will depend on the specific requirements of the etching process.

What are the key factors to consider when etching TiO2 on silicon substrates?

The key factors to consider when etching TiO2 on silicon substrates include the type of etching method, etching time, etching temperature, etching solution or gas composition, and the type of substrate being used. It is important to carefully control these factors to achieve the desired etching results.

What are some potential challenges when etching TiO2 on silicon substrates?

Some potential challenges when etching TiO2 on silicon substrates include achieving uniform etching across the entire substrate, avoiding damage to the underlying silicon layer, and controlling the etching depth to achieve the desired pattern or structure. These challenges can be addressed by carefully selecting the etching method and controlling the etching parameters.

How can I optimize the etching process for TiO2 on silicon substrates?

To optimize the etching process for TiO2 on silicon substrates, it is important to carefully choose the etching method and parameters based on the desired outcome. Additionally, using a protective layer on the silicon substrate can help prevent damage during the etching process. Regular monitoring and adjustment of the etching parameters can also help achieve optimal results.

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