- #1
ddta1050
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Homework Statement
Vtn = 0.4V
W/L = 10
NMOS1
Saturation Region
Drain = 2.5V
Gate = 1.9V
Source = 0V
Vtn = 0.4V
W/L = 10
NMOS2
Triode/Linear/Ohmic Region
Drain = 0.5V
Gate = 2.2V
Source = -2.3V
tox = 9um
un = 250cm^2/V
W/L = 10
Homework Equations
Saturation: Id = Kn * (Vgs-Vt)^2/2
Triode/Linear/Ohmic: Id = Kn * ((Vgs-Vt)Vds - Vds^2/2)
The Attempt at a Solution
tox = 9nm
un = 250cm^2/V
cox = eox/tox = (3.9*8.85*10^-14F/cm)/9nm = 0.003835F/m^2
kn = un*cox*W/L = 95.875uA/V^2
NMOS1
Ids = Kn * (Vgs-Vt)^2/2 = 1.08mA
NMOS2
Vds = Vd - Vs = 0.5-(-2.3)=2.8V
Ids = Kn * (Vgs-Vt)(Vds) - Vds^2/2) = 7.248mA