Flash Memory Floating Gates and heavy ions causing bit flipping

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In summary, flash memory utilizes floating gate transistors to store data by trapping charge, which can be affected by heavy ion radiation. When heavy ions strike the silicon substrate, they can cause bit flipping, leading to data corruption. This radiation-induced effect poses challenges for the reliability of flash memory in space and other radiation-prone environments, necessitating the development of more resilient memory technologies.
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addigde
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Hello!
I'm always thought what flash does not have radiation hardened capabilities cause they have got floating gate what can be switched by heavy ion

But, according to page 36 NASAs reporters maintain what configuration of ProASIC3 is already hardened by nature.

https://www.inaoep.mx/seressa2015/archivos/Jueves_11_00_BERG.pdf

Can somebody explain, please, does it has an some acknowledge? Thanks in advance!
 
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  • #2
I think what they are saying is that flash-based FPGAs are harder than SRAM-based devices, not that they are completely immune to SEUs. But it's a long presentation and I may have missed the point.
 
  • #3
Yes, I thought so at the beginning but after searching another similar sources I found the same declaration.
That's why I decided to clarify physics basis in this case from this source.
 

FAQ: Flash Memory Floating Gates and heavy ions causing bit flipping

What is a floating gate in flash memory?

A floating gate in flash memory is a type of non-volatile storage technology used to store electrical charge. It is a component of a transistor that can trap and hold electrons, allowing the memory cell to retain data even when the power is turned off. This trapped charge represents the stored data, typically in the form of binary values (0s and 1s).

How do heavy ions cause bit flipping in flash memory?

Heavy ions can cause bit flipping in flash memory through a process known as Single Event Upset (SEU). When a heavy ion strikes the semiconductor material of a memory cell, it can generate a large number of electron-hole pairs. This sudden influx of charge can disrupt the stored data by either adding or removing electrons from the floating gate, leading to a change in the stored bit value.

What are the potential consequences of bit flipping in flash memory?

Bit flipping in flash memory can lead to data corruption, where the stored information becomes incorrect or unreadable. This can have serious consequences in critical applications such as aerospace, medical devices, and data storage systems, where data integrity is paramount. In less critical applications, it can still cause software errors, crashes, and loss of user data.

Can bit flipping caused by heavy ions be mitigated?

Yes, bit flipping caused by heavy ions can be mitigated through several techniques. Error correction codes (ECC) can detect and correct single-bit errors. Redundant systems can provide backup data in case of corruption. Shielding and radiation-hardened designs can reduce the likelihood of heavy ion strikes. Additionally, regular data scrubbing and integrity checks can help identify and correct corrupted data before it causes problems.

Why is it important to study the effects of heavy ions on flash memory?

Studying the effects of heavy ions on flash memory is important because it helps in understanding and mitigating reliability issues in environments where radiation levels are high, such as space missions, high-altitude flights, and nuclear facilities. By understanding how heavy ions interact with flash memory, scientists and engineers can design more robust systems that maintain data integrity and ensure the reliable operation of critical applications.

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