How can you make Ohmic contact with NiSi in semiconductors?

In summary, the conversation discusses the use of nickel silicide (NiSi) for ohmic contact with semiconductors. It is noted that ohm contact occurs when a semiconductor has a lower work function than a metal, and the conversation explores how NiSi, with a larger work function than nickel (Ni), can still be used for ohmic contact. The participants also mention researching and discussing the application and properties of NiSi compared to Ni for ohmic contact.
  • #1
wasong
11
1
TL;DR Summary
How NiSi is ohmic contact?
How NiSi is ohmic contact?
Ohm contact occurs when a semiconductor has a lower work function than a metal, doesn't it? NiSi has a larger work function than Ni, so how do you make ohm contact?
 
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  • #2
Can you post some links to the reading that you have been doing about this? Why do you want to use Ni in an Ohmic contact with a semiconductor? What is the application?
 
  • #4
berkeman said:
Can you post some links to the reading that you have been doing about this? Why do you want to use Ni in an Ohmic contact with a semiconductor? What is the application?
I'm not trying to use nickel for Ohm contact. Nickel silicide is used for ohmic contact differently from nickel, so we just want to know what difference NiSi becomes ohmic contact differently from Ni.
 

FAQ: How can you make Ohmic contact with NiSi in semiconductors?

How do you define Ohmic contact in semiconductors?

Ohmic contact refers to the electrical connection between a metal and a semiconductor material, where the current-voltage relationship follows Ohm's law. This means that the resistance of the contact remains constant regardless of the applied voltage.

What is the importance of making Ohmic contact with NiSi in semiconductors?

Ohmic contact with NiSi is crucial in semiconductor devices as it allows for efficient transfer of charge carriers between the metal and the semiconductor, enabling the device to function properly. It also helps in reducing energy losses at the contact interface.

What are the methods used to achieve Ohmic contact with NiSi in semiconductors?

The most common methods include annealing, ion implantation, and surface treatment with chemicals. These techniques help in altering the properties of the contact interface, leading to a decrease in contact resistance and achieving Ohmic behavior.

What factors can affect the quality of Ohmic contact with NiSi in semiconductors?

The quality of Ohmic contact can be affected by factors such as the type of semiconductor material, the thickness of the metal layer, the annealing temperature, and the cleanliness of the contact surface. It is essential to optimize these parameters to achieve a low resistance contact.

How can you characterize the Ohmic contact with NiSi in semiconductors?

The quality of Ohmic contact can be evaluated by measuring the contact resistance, which should be low and stable. Other characterization techniques include current-voltage measurements, transmission line method, and four-point probe measurements. These methods can determine the type of contact behavior and the interface properties.

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