How do wrap-around gate CNTFETs work?

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The CNTFET can therefore be thought of as a switch that can be turned on and off by the gate voltage.
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niklasR
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Hello,
I do my physics coursework about Graphene and carbon nanotubes. In this context i mainly have to talk about them replacing silicon in transistors like (MOS)FETs - Wrap-around gate CNTFETs

Homework Statement


I know how a standard silicium-MOSFET works, the is the source, and the drain and both are connected through the silicon-gate which only conducts if there is a voltage applied.
But I don't quite get how a CNTFT works. I have this, very simple image:
800px-CNT_Sheathed.jpg
(by Popproject3, Wikimedia)
On the left hand we have the source, on the right the drain. The metal layer is the gate.

But, my questions:
  1. What does the CNT stop from conducting when there is no voltage applied at the gate?
  2. The dielectric layer does never conduct, so how the gate "tell" the CNT to conduct? Is it just the electromegnetic field around it? (I suppose I need an answer to question 1 to get an answer for that ;)

2. The attempt at a solution
A lot of thinking & reading, mainly on http://en.wikipedia.org/wiki/MOSFET" and other things.

Please don't spam the thread with "google it", or something, I DID google it and I haven't found helpful, understandable things.

I'm Lower Sixth.


PS: I'm German…
 
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Answer: A carbon nanotube field effect transistor (CNTFET) is a type of field-effect transistor that utilizes a carbon nanotube as its channel instead of a semiconductor like silicon. In a CNTFET, the source and drain are connected by a single walled or multi-walled carbon nanotube. A metal gate wraps around the carbon nanotube and is separated from it by a thin dielectric layer. The gate voltage applied to the metal gate controls the current flow between the source and drain. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons to the gate. This creates a "channel" of electrons that can then flow between the source and drain. When there is no voltage applied to the gate, the electric field does not exist, and so the channel between the source and drain is blocked, preventing the flow of current.
 

FAQ: How do wrap-around gate CNTFETs work?

What is a wrap-around gate CNTFET?

A wrap-around gate CNTFET, or carbon nanotube field-effect transistor, is a type of transistor that uses carbon nanotubes as the conducting channel. The wrap-around gate refers to the design of the transistor where the gate completely surrounds the nanotube, allowing for better control of the current flow.

How does a wrap-around gate CNTFET work?

A wrap-around gate CNTFET works by using a gate voltage to control the flow of current through the carbon nanotube channel. When the gate voltage is applied, it creates an electric field that can either attract or repel the electrons in the nanotube, thus controlling the current flow.

What are the advantages of using wrap-around gate CNTFETs?

There are several advantages to using wrap-around gate CNTFETs, including higher operating speeds, lower power consumption, and improved scalability compared to traditional silicon-based transistors. They also have a higher on/off ratio, meaning they can completely turn off the flow of current, resulting in better energy efficiency.

What are the potential applications of wrap-around gate CNTFETs?

Wrap-around gate CNTFETs have the potential to be used in a variety of applications, including high-speed computing, sensing devices, and energy harvesting systems. They are also being researched for use in flexible and transparent electronics due to their unique properties.

What are the challenges in developing wrap-around gate CNTFETs?

Some of the challenges in developing wrap-around gate CNTFETs include controlling the alignment and diameter of the carbon nanotubes, as well as improving the consistency and reliability of the devices. Additionally, finding ways to integrate them into existing semiconductor technology is also a challenge.

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