How do you calculate carrier concentration in a doped semiconductor?

In summary, the conversation is about determining the carrier concentration in a Si sample doped with 10^14 boron atoms per cm3 at 300K. The formula n = 2[(2pi*un*kT/h^2)]^(3/2) is suggested, but the question of how to incorporate the Nd = 10^14 is raised. The speaker suggests solving for n and p using the charge neutrality relationship and the formula for doped semiconductors, but is unsure about the value of Nd.
  • #1
becon
3
0
I have a homework on Solid state device
the question is :"If a Si sample is doped with 10^14 boron atoms per cm3 then determine the
carrier concentration in the Si sample at 300K."[/b]

I thought that the concentration is calculate by
n = 2[(2pi*un*kT/h^2)]^(3/2)
is this right formula ? How about the Nd = 10^14 ?

thank you.
 
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  • #2
I thought it wrong.
I have tried and solve it like : Boron is acceptor then Na = 10^14
by the charge neutrality relationship, n + Nd = p + Na
this is doped semiconductor, then n = Nd - Na and p = ni^2 / n
but what is the value of Nd ?
 

Related to How do you calculate carrier concentration in a doped semiconductor?

What is carrier concentration?

Carrier concentration refers to the number of charge carriers (either electrons or holes) present in a material per unit volume. It is typically measured in units of 10^15 or 10^18 per cubic centimeter.

How is carrier concentration calculated?

Carrier concentration can be calculated by dividing the total number of charge carriers by the volume of the material. It can also be determined through experiments such as Hall Effect measurements or by using mathematical models.

What factors affect carrier concentration?

Carrier concentration can be affected by various factors such as doping (adding impurities to the material), temperature, and applied electric fields. Intrinsic materials have lower carrier concentrations compared to doped materials.

Why is carrier concentration important in semiconductors?

In semiconductors, the carrier concentration determines the electrical conductivity of the material. Higher carrier concentrations result in increased conductivity, while lower concentrations lead to lower conductivity. This is essential for controlling the flow of electricity in electronic devices.

How does carrier concentration impact the band structure of a material?

Carrier concentration plays a significant role in determining the band structure of a material. The presence of more charge carriers can shift the energy levels of the bands, leading to changes in the material's electronic properties. This is why doping is crucial in creating desired properties in semiconductors.

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