- #1
jaus tail
- 615
- 48
Hi,
I'm studying MOSFET in detail and I'm struggling to understand how the channel is formed in case of SOI Mosfet.
For normal mosfet
A positive Gate to source voltage attracts electrons from P substrate towards Gate and thus a channel is formed.
But in case of SOI
There is a buried Oxide film so how will electrons go towards Gate and form the channel? How is the channel formed in SOI Case? I tried google but only came across Fabrication Process of SOI and its advantages and drawbacks.
Any insight would be helpful?
I'm studying MOSFET in detail and I'm struggling to understand how the channel is formed in case of SOI Mosfet.
For normal mosfet
A positive Gate to source voltage attracts electrons from P substrate towards Gate and thus a channel is formed.
But in case of SOI
There is a buried Oxide film so how will electrons go towards Gate and form the channel? How is the channel formed in SOI Case? I tried google but only came across Fabrication Process of SOI and its advantages and drawbacks.
Any insight would be helpful?