How much the dielectric loss tangent of 10 nm thick SiO2 ?

In summary, the dielectric loss tangent of 10 nm thick SiO2 is typically around 0.01-0.05 and can vary depending on the material and measurement technique. It affects the electrical properties of the material by influencing energy dissipation, capacitance, and impedance. The dielectric loss tangent can be controlled through various methods and is affected by factors such as temperature, frequency, impurities, and crystal structure. It is typically measured using techniques such as impedance spectroscopy, dielectric spectroscopy, and parallel plate capacitor measurements, with the choice depending on the material being measured.
  • #1
PF123
3
0
How much the dielectric loss tangent of 10 nm thick SiO2 at 1Ghz ?
I am studying the MOSFETs i want to know the the dielectric loss tangent of SiO2 dielectric at such manometer thickness, So if anybody know any reference about it Please let me know..
 
Physics news on Phys.org
  • #2
Thanks for the post! Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post?
 

FAQ: How much the dielectric loss tangent of 10 nm thick SiO2 ?

1. What is the dielectric loss tangent of 10 nm thick SiO2?

The dielectric loss tangent of 10 nm thick SiO2 can vary depending on the specific characteristics of the material and the measurement technique used. However, on average, it is typically around 0.01-0.05.

2. How does the dielectric loss tangent of 10 nm thick SiO2 affect electrical properties?

The dielectric loss tangent of 10 nm thick SiO2 is an important factor in determining the electrical properties of the material. It affects the amount of energy that is dissipated as heat when an electric field is applied, as well as the overall capacitance and impedance of the material.

3. Can the dielectric loss tangent of 10 nm thick SiO2 be controlled?

Yes, the dielectric loss tangent of 10 nm thick SiO2 can be controlled through various methods such as adjusting the composition of the material, using different fabrication techniques, and applying external electric fields.

4. What factors can affect the dielectric loss tangent of 10 nm thick SiO2?

The dielectric loss tangent of 10 nm thick SiO2 can be affected by factors such as temperature, frequency of the applied electric field, presence of impurities, and the crystal structure of the material.

5. How is the dielectric loss tangent of 10 nm thick SiO2 measured?

The dielectric loss tangent of 10 nm thick SiO2 is typically measured using different techniques such as impedance spectroscopy, dielectric spectroscopy, and parallel plate capacitor measurements. Each method has its own advantages and limitations, and the choice of technique depends on the specific characteristics of the material being measured.

Similar threads

A Dielectric loss of SiO2 layers.
Replies
3
Views
3K
Graphene visibility vs. SiO2 thickness
Replies
1
Views
4K
A Bulk and Slab electronic structure differences
Replies
6
Views
999
I Good positing in electrostatics problem with dielectrics - Poisson problem with conditions at the Dirichlet or Neumann edge
Replies
1
Views
1K
A Capacitor With A Dielectric But Also Free Space in Between
Replies
5
Views
1K
Imaginary part of dielectric constant.
Replies
3
Views
21K
How does dielectric heating actually work?
Replies
1
Views
2K
A How to start my reading for 2D screening models
Replies
1
Views
1K
I Hologram recording on photorefractive material
Replies
0
Views
1K
Refraction of IR "light" in CCD sensors SiO2 layer
Replies
9
Views
2K

Hot Threads

Recent Insights

Back
Top