To define the material properties for HfZrO2 (HZO), you need to add its parameters to the material database in Silvaco TCAD. This includes defining its dielectric constant, bandgap, electron affinity, and other relevant properties. You can do this using the `material` command in the input deck.
To add HZO as an oxide gate, you can use the `oxide` command in the device structure section of the input deck. For example:
oxide material=HZO thick=10.0This command sets HZO as the gate oxide material with a thickness of 10 nm.
You need to define the electrical properties such as the relative permittivity (k-value) and band offsets. This can be done using the `material` command:
material name=HZO permittivity=25 bandgap=5.8 affinity=2.0This sets the relative permittivity to 25, bandgap to 5.8 eV, and electron affinity to 2.0 eV.
To incorporate HZO in a MOSFET structure, you need to define it as the gate oxide in the MOSFET section of your input deck. You can do this by specifying the gate material and its properties:
structure silicon substrate...gate material=HZO thick=10.0...This defines a MOSFET with HZO as the gate oxide material.
Common issues include incorrect material property definitions, syntax errors in the input deck, and convergence problems in simulations. To troubleshoot, ensure all material properties are correctly defined, check for syntax errors, and use appropriate initial conditions and meshing strategies to aid convergence. Reviewing the Silvaco TCAD documentation for specific material parameters and simulation settings can also be helpful.