I have question,The electron and hole concentration in a intrinsic

In summary, the conversation discusses the change in electron and hole concentration in an intrinsic semiconductor when doped with a p-type material. The possible solutions include the equations n+p = n1+p1, n+n1 = p+p1, np1 = n1p, and np = n1p1. The correct answer is option (d) due to the constant product of electron and hole concentration in an intrinsic semiconductor.
  • #1
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I have question,
The electron and hole concentration in a intrinsic semiconductor are n1 and p1 respectively.When doped with a p-type material these change to n and p repectively,then
a)n+p = n1+p1
b)n+n1= p+p1
c)np1 = n1p
d)np = n1p1

could anyone explain what would be the solution.
I am new to electronics and learning the concepts. I think the answer should be opton (b) as only electrons and holes can added before and after seperately.
 
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  • #2


I think the Answer to your question should be (d).

When you start with the subject there is an explanation that product of the concentration of holes and electrons is always equal to a constant. Thus on addition of acceptor atoms there will be additonal holes which would alter the concentration of electrons also due to recombination but the fact that product of concentration is always a constant and is given by :- (For intrinsic semiconductor, n=p=[n(i)]^2 ) this constant always remains there !
 
  • #3


Thanks for the update
 

FAQ: I have question,The electron and hole concentration in a intrinsic

What is meant by intrinsic electron and hole concentration?

Intrinsic electron and hole concentration refers to the number of free electrons and holes present in a material at thermal equilibrium, without the influence of any external factors. This concentration is determined by the material's band structure and temperature.

How does the intrinsic electron and hole concentration change with temperature?

The intrinsic electron and hole concentration increases with temperature due to the increase in thermal energy, which allows more electrons to jump to the conduction band and more holes to form in the valence band.

What is the difference between intrinsic and extrinsic electron and hole concentration?

Intrinsic electron and hole concentration is determined solely by the material's properties, while extrinsic concentration takes into account the presence of impurities or doping agents that can significantly alter the number of free electrons and holes in a material.

How does the band gap affect the intrinsic electron and hole concentration?

The band gap, which is the energy difference between the valence and conduction bands, plays a crucial role in determining the intrinsic electron and hole concentration. A larger band gap leads to a lower concentration, as there is a higher energy barrier for electrons to jump to the conduction band.

Can the intrinsic electron and hole concentration be manipulated?

Yes, the intrinsic electron and hole concentration can be altered by changing the temperature or by doping the material with impurities. This can shift the balance between electrons and holes and change the overall concentration of free carriers in the material.

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