Is possible to use interband transition to design mid-infrared photodetector?

In summary, the group discussing the possibility of using interband transition to design a mid-infrared photodetector. The individual is currently working with intraband transition and suggests using intersubband transitions with quantum wells for mid-infrared frequencies. They mention that interband transitions involve crossing the material band gap, which may not be suitable for the desired energy range. They recommend looking into heterostructures, specifically InAs-InP, and suggest a book by Sneider Liu for further information on quantum well infrared photodetectors.
  • #1
hadimahmodi
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Is it possible to use interband transition to design mid-infrared photodetector?

I want to design mid-infrared photodetector based on interband transition.
I could not find any article that use interband transition for mid-infrared photodetector.
 
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  • #2
I'm working with intraband transition and I think that you are looking for 100-200 meV transition. I (the group in which I'm employed) reach this range with intersubband transitions. If you are looking for transition from valence to conduction band, you have to find a very low-bandgap material...

I don't know if it exist or has already been used... maybe you can look for InSb devices!
 
  • #3
Yes, I think you better off using intersubband (intraband) transitions with quantum wells for mid-infrared frequencies. An interband transition involves crossing the material band gap, so the energy of the transition would have to be greater or equal to the band gap. And material band gaps don't typically go that low.
 
  • #4
Thank you for your reply.
In fact, I want to know which transition (interband or intersubband) is appropriate for quantum well infrared photodetectors? which of them has benefit? I have no problem with material, just transition mechanism.
 
  • #5
Try with heterostructures: InAs-InP for example...

There's a book of Sneider Liu very useful... It's about Q.W.I.P.s find them on the internet.
 

FAQ: Is possible to use interband transition to design mid-infrared photodetector?

1. What are interband transitions?

Interband transitions refer to the movement of an electron from one energy band to another in a solid material. In a photodetector, these transitions can be used to detect and convert incoming mid-infrared light into an electrical signal.

2. How does interband transition enable mid-infrared detection?

Mid-infrared light has lower energy than visible light, and can only be detected through transitions between energy bands in certain materials. Interband transitions involving the movement of electrons between the valence and conduction bands in semiconductors can create a measurable electrical signal in response to mid-infrared light.

3. What factors affect the efficiency of using interband transitions for mid-infrared detection?

The efficiency of interband transition-based mid-infrared detection depends on the material properties, such as bandgap energy, mobility of carriers, and the strength of the interband transition. Additionally, the design of the photodetector, including the type and arrangement of semiconductor layers, can also impact its efficiency.

4. What are the advantages of using interband transitions for mid-infrared photodetectors?

Interband transition-based mid-infrared photodetectors offer several advantages, including high sensitivity, fast response time, and low noise levels. They also do not require cooling, making them more cost-effective and practical for use in various applications.

5. Are there any limitations or challenges in using interband transitions for designing mid-infrared photodetectors?

One potential limitation is the narrow range of materials that can exhibit interband transitions in the mid-infrared range. This can limit the options for designing efficient photodetectors. Additionally, interband transitions can also introduce noise and reduce the signal-to-noise ratio in the photodetector.

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