- #1
hitcool007
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Why does the depletion layer penetrate a lightly doped side of a p-n junction diode?? Consider that there is a lightly doped p-side and a heavily doped n-side in a p-n junction diode , which is connected to a dc power supply in reversed biased. Now, I've read that depletion layer penetrates the p-side in this case. But i could not figure out the reason behind it. So, Can u please explain me the mechanism involved in terms of the movement of electrons in the circuit.
Im in a faulty assumption that the side in which the diode is more heavily doped is bound to be penetrated more by the depletion layer..
(-I've completed my intermediate)
Im in a faulty assumption that the side in which the diode is more heavily doped is bound to be penetrated more by the depletion layer..
(-I've completed my intermediate)