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Material Science (Chemistry Related) Problem
I am having a hard time starting my solution to the following problem:
So far I have been looking throughout the textbook at some sample problems but the sample problems are not asking for a similar solution to this question. I have also referred to my lecture notes and have not gotten any where for quite some time. Mentally I thought that I could find the volume of the silicon oxide but I was incorrect in my mental calculations. Please help me get started.
I am having a hard time starting my solution to the following problem:
In a metal-oxide-semiconductor (MOS) device, a thin layer of [tex]SiO_2[/tex] (density = 2.20 [tex]Mg/m^3[/tex]) is grown on a single crystal chip of silicon. How many Si atoms and how many O atoms are present per square millimeter of the oxide layer? Assume that the layer thickness is 100 nm.
So far I have been looking throughout the textbook at some sample problems but the sample problems are not asking for a similar solution to this question. I have also referred to my lecture notes and have not gotten any where for quite some time. Mentally I thought that I could find the volume of the silicon oxide but I was incorrect in my mental calculations. Please help me get started.
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