- #1
ctech4285
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ok looking at datasheets for mostfet there is source/drain rise and fall time. does this only depend on the voltage rise fall time of the gate?
so if you apply a voltage to the gate it will take a wile until the voltage of the actual gate reaches that of the applied voltage because of resistance and capacitance of the gate. so you could apply a very high voltage for a short a time to charge discharge the gate as fast as you possible want. maybe a few 100V timed to exactly the time needed for the gate to reach let's say 10V, maybe nano/pico seconds. now of course there will be a point at which you burn enough energy to blow up the mosfet
so if you apply a voltage to the gate it will take a wile until the voltage of the actual gate reaches that of the applied voltage because of resistance and capacitance of the gate. so you could apply a very high voltage for a short a time to charge discharge the gate as fast as you possible want. maybe a few 100V timed to exactly the time needed for the gate to reach let's say 10V, maybe nano/pico seconds. now of course there will be a point at which you burn enough energy to blow up the mosfet