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thovarua
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In MOSCAP, why does the band stop bending as soon as the Si Fermi level touches either the conduction band (inversion) or the valance band (accumulation)?
Tom.G said:
Don't know, but a Google search found some good hits.
(https://www.google.com/search?&q=moscap+band+diagram)
If you watch this one directly on youtube, they show links for more videos on the subject by the same author. (Jordan Edmunds)
Cheers,
Tom
A MOS (Metal-Oxide-Semiconductor) capacitor is a type of electronic device that consists of a metal electrode (M), an insulating oxide layer (O), and a semiconductor layer (S). It is commonly used in integrated circuits as a basic component for building transistors and other electronic devices.
In a MOS capacitor, bias condition refers to the voltage applied to the device. A large positive bias means that a high voltage is applied to the metal electrode, while a large negative bias means that a high voltage is applied to the semiconductor layer. These extreme bias conditions can significantly affect the behavior of the MOS capacitor.
Under a large positive bias, the MOS capacitor experiences a phenomenon called "dielectric breakdown," where the insulating oxide layer breaks down and allows current to flow through. Under a large negative bias, the MOS capacitor can exhibit a phenomenon called "avalanche breakdown," where a high electric field causes the semiconductor layer to break down and allow current to flow.
One potential application is in high-voltage power electronics, where MOS capacitors can be used as switches or rectifiers. They can also be used in devices that require precise control of electric fields, such as sensors and actuators.
The main challenge is managing the breakdown phenomena that occur under extreme bias conditions. This can lead to device failure and limit the overall performance and reliability of the device. Additionally, the high voltages involved can also pose safety hazards and require special handling and design considerations.