- #1
daudaudaudau
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In Sedra&Smith's microelectronic circuits they have the following expression for the drain current in a MOSFET in saturation
iD = 1/2µpCox(W/L)Vov2(1+VDS/VA)But I don't see how this can be correct. Wikipedia also has another expression, see http://en.wikipedia.org/wiki/Channel_length_modulation#Shichman.E2.80.93Hodges_model
So which is correct?
iD = 1/2µpCox(W/L)Vov2(1+VDS/VA)But I don't see how this can be correct. Wikipedia also has another expression, see http://en.wikipedia.org/wiki/Channel_length_modulation#Shichman.E2.80.93Hodges_model
So which is correct?