On projected Density of States

In summary, the conversation discusses the concept of partial density of states (PDOS) and its origin as an analogon of COOP's in chemistry. The PDOS is used to express the relative contribution of each atom to the total DOS of a molecule or crystal. The conversation also touches on the differences between projected DOS and partial DOS, and recommends looking into Mulliken's population analysis and the Extended Huckel model for further understanding.
  • #1
leoant
35
0
Dear all:
I am frustrated in the concept of the PDOS, may someone be kind to refer me to the origin of this concept? Thanks.

Regards
 
Physics news on Phys.org
  • #2
leoant said:
Dear all:
I am frustrated in the concept of the PDOS, may someone be kind to refer me to the origin of this concept? Thanks.

Regards

Don't you mean partial density of states ? When plotted out, they express the relative contribution to the total DOS (of a molecule built out of two atoms for example) wrt each other. I mean, the DOS of each atom is plotted in one graph. When you also add the total DOS you can clearly see which atom delivers the biggest contribution to the DOS of the molecule. These data are always plotted with respect to the energy (the horizontal axis if you will). They are the direct analogon of COOP's (crystal orbital overlap population) in chemistry. The origin is just the idea of COOP and more specifically, the Mulliken population analysis...Do you know this ? When two electronic levels overlap, you say that there is an electronic density between two atoms : a chemist calls this the bond, right ? Now, what if you persist in wanting to divide up the electronic density between the two atoms that are involved ? I mean, how to assign the overlap density to the two centers ? Well, Mulliken suggested that you should just deivide this overlap density by a actor two and then assign it to each atom...


marlon
 
  • #3
Thank you for your reply, marlon. Yeah I am reading the paper by R. S. Mulliken, however, what I really do is calculation with plane-wave pseudopotential ab initio method and I want to interpret my results. Thus I wonder how can one derive the same meaning for plane waves as AOs in Mulliken's realm? And further more, as to crystals, which are different from moleculars, how can one use, say, the Mulliken Population Analysis correctly and make sense? And I still want to know if there is any difference between "Projected DOS" and "Partial DOS", or there's no "Projected DOS" and only "Partial DOS"?
 
  • #4
I think the terminology is almost interchangeable, but not quite. Partial DOS refers to both Gross Population DOS as well as Projected DOS.

I do not know enough about this but I too would have recommended Mulliken's paper on population analysis.

Also, you could look for calculations for crystals in the framework of the Extended Huckel model (a modified form of molecular orbital theory) using Overlap Population DOS.
 
Last edited:

FAQ: On projected Density of States

1. What is the "On projected Density of States" (OPDOS)?

The OPDOS is a measure of the distribution of electronic states within a material. It provides information about the energy levels and density of electrons within a specific region of space, such as a surface or interface.

2. How is the OPDOS calculated?

The OPDOS is typically calculated using theoretical models and simulations, such as density functional theory or tight-binding models. These calculations take into account the electronic structure and interactions within the material to determine the distribution of electronic states.

3. What information can be obtained from OPDOS?

The OPDOS can provide information about the electronic properties of a material, such as its band structure, energy levels, and density of states. It can also reveal how these properties vary across different regions of the material, such as at interfaces or defects.

4. How is OPDOS used in materials research?

OPDOS is a useful tool for understanding the electronic properties of materials and how they may affect their physical and chemical properties. It is commonly used in the design and characterization of electronic devices, as well as in the study of surface and interface phenomena.

5. What are the limitations of OPDOS?

While OPDOS provides valuable information about the electronic properties of materials, it is limited by the accuracy of the theoretical models and simulations used to calculate it. Additionally, OPDOS may not provide a complete picture of electronic states in highly disordered or complex materials.

Back
Top