A P channel MOSFET works by using a thin layer of p-type semiconductor material (commonly silicon) as the channel between the source and drain terminals. When a positive voltage is applied to the gate terminal, it creates an electric field that attracts holes (positive charge carriers) in the channel, allowing current to flow from source to drain.
The source is where the current enters the transistor, the gate controls the flow of current by creating an electric field, and the drain is where the current exits the transistor. In a P channel MOSFET, the source and drain are both doped with n-type material, while the gate is doped with p-type material.
The main difference between a P channel MOSFET and an N channel MOSFET is the type of dopant used in the channel. In a P channel MOSFET, the channel is made of p-type material and the source and drain are n-type, while in an N channel MOSFET, the channel is made of n-type material and the source and drain are p-type.
P channel MOSFETs have a lower threshold voltage (the voltage required to turn them on) compared to N channel MOSFETs, making them easier to control. They also have a higher resistance when turned off, resulting in lower leakage currents and better energy efficiency.
P channel MOSFETs are commonly used in complementary metal-oxide-semiconductor (CMOS) circuits, where they work in conjunction with N channel MOSFETs to create logic gates and other electronic components. They are also used as switches in power management circuits due to their low power consumption and high efficiency.