Optical response of In_xGa_1-xAs pin detector

In summary, the study of the optical response of In_xGa_1-xAs pin detectors focuses on how varying the indium composition (x) influences their performance characteristics, including absorption efficiency and spectral response. The research highlights the tunability of these detectors for applications in infrared detection by adjusting the In content, which impacts the energy bandgap and, consequently, the device's sensitivity across different wavelengths. Experimental results demonstrate the relationship between composition and optical properties, providing insights into optimizing detector design for enhanced performance in photonic applications.
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TL;DR Summary
Plot of the photocurrent versus the wavelength of light of a GaAs/InGaAs/Si top-illuminated pin photodetector
Greetings,

I am trying to obtain a plot of the photocurrent versus the wavelength of light of a GaAs/InGaAs/Si top-illuminated pin photodetector, where the doping ratio for p-type GaAs is conc=1e17, for i-layer In_xGa_1-xAs conc=1e14 and for n-type Si conc=1e18. Firstly, for x=0.05, if we illuminate this structure with top light, the plot of the photocurrent versus the wavelength of light we obtain is as follows:
1726818041237.png


For x=0.1:

1726818141092.png


For x=0.2:

1726818158378.png


Finally, for x=0.3:

1726818194029.png


What I don't fully understand here is that the In_xGa_1-xAs layer is the active layer here and Eg=1.351 eV for x=0.05, so I would expect a peak of around 0.918 micrometres in the wavelength plot of the current coming out of the pin detector. The same situation is Eg=1.279 eV for x=0.1 and the corresponding cut-off wavelength is a peak at 0.970 micrometres. Moreover, for x=0.2 and 0.3 the peak disappears as you can see in the graphs. What could be the physical explanation for these phenomena?
 

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