PN junction's behavior near corners

  • Thread starter Assaf Peled
  • Start date
  • Tags
    Behavior
In summary, the conversation discusses a 2D configuration of a P+N junction and the depletion region's profile on the N side near the corners. The depletion region follows a simple 1D Poisson's equation analysis along the flat boundary interface, but it becomes more complex near the corners. The idea of using conformal mapping, specifically the Schwartz-Christoffel transform, to calculate the potential and diffusion current is suggested, but it may require elliptic integrals and a decision between an analytic or numeric answer.
  • #1
Assaf Peled
5
0
Hey all,

Consider a general 2D configuration of a P+N junction where a small P+ material rectangle is placed upon a much larger N-material rectangle. So, the interface between the P+ and the N comprises a flat boundary line terminated on each side by a right-angled corner (hope I'm being clear enough). My question is how to find the depletion region's profile on the N side (shape and width) near these corners.

The depletion region along the flat boundary interface follows the simple 1D Poisson's eq. analysis, which is no longer valid when approaching the corner area.

Any idea on how to formulate an analytic expression for the depletion region around corners?

Thanks a Bunch
 
Engineering news on Phys.org
  • #2
The depletion zone is where the diffusion potential is balanced by the electrostatic potential, so you need to calculate both a potential and a streamline (for the diffusion current). You may be able to compute them both using conformal mapping-- in particular, the Schwartz-Christoffel transform. This will involve elliptic integrals so you need to decide how important it is to have an analytic va. numeric answer.
 
  • Like
Likes FactChecker

Related to PN junction's behavior near corners

1. What is a PN junction and where are they commonly found?

A PN junction is the interface between a P-type and N-type semiconductor material. They are commonly found in electronic devices such as diodes, transistors, and solar cells.

2. How do PN junctions behave near corners?

PN junctions can exhibit different behaviors near corners depending on the material properties and the design of the junction. These behaviors can include increased electric field and charge accumulation, resulting in increased leakage current and potential breakdown.

3. What factors affect the behavior of PN junctions near corners?

The behavior of PN junctions near corners is affected by various factors such as the doping concentration and profile of the materials, the shape and size of the junction, and the presence of impurities or defects in the material.

4. How can the behavior of PN junctions near corners be controlled?

The behavior of PN junctions near corners can be controlled by optimizing the design and fabrication process of the junction. This can include adjusting the doping profile, using different materials, and implementing techniques such as rounding the corners to reduce electric field concentration.

5. What are the potential consequences of PN junctions behaving unpredictably near corners?

If PN junctions behave unpredictably near corners, it can lead to device failure, reduced efficiency, and increased power consumption. It can also affect the overall performance and reliability of electronic devices that rely on PN junctions for their operation.

Back
Top