- #1
theBEAST
- 364
- 0
In my notes package it shows that for a REV biased diode, in the p type side, the concentration of majority carriers (pp0 holes) increases as we get closer to the junction. However, I don't get how this makes sense, since the metal contact between the negative terminal of the source and the p-type region is negatively charge, shouldn't we expect the holes to be attracted to the metal contact? Thus, in the graph shown below, the concentration of pp0 should be larger at the beginning and decrease as it gets closer to the junction?
PS: feel free to ignore some of the things I wrote :P
PS: feel free to ignore some of the things I wrote :P