Question on donor concentration in thermal equilibrium

In summary, at T=200k, in a sample of GaAS, the experimentally determined values are n0=5p0 and Na=0. Using the mass action law equation, p0=0.567cm-3 and n0=2.8363cm-3. It is correct to say that Nd is approximately equal to n0 in this case, as the majority of carriers in the material are coming from the donors.
  • #1
snoothie
18
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Homework Statement



In a sample of GaAS at T=200k, we have experimentally determined that n0=5p0 and that Na=0. Calculate n0,p0, and Nd.

Homework Equations





The Attempt at a Solution


Have solved that ni for GaAS at 200k is 1.2687cm-3.
And using the mass action law equation, p0=ni2/5p0. I derived p0=0.567cm-3 , n0=5p0= 2.8363cm-3.

Can someone confirm if it is right to say that the donor concentration, Nd is approximately equal to n0 in this case? Since the equilibrium equation state, if Nd >> ni, then n0 is approximately equal to Nd.
 
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  • #2


Yes, your understanding is correct. In this case, since Nd is much larger than ni, n0 can be approximated as equal to Nd. This is because the majority of the carriers in the material are coming from the donors, and the contribution from the intrinsic carriers (n0) is relatively small. So, for practical purposes, you can consider n0 and Nd to be approximately equal.
 
  • #3


I would say that your calculations appear to be correct based on the given information. However, I would also suggest double-checking your calculations and equations to ensure accuracy. Additionally, it is important to note that the donor concentration, Nd, is not necessarily equal to n0 in all cases. It is only approximately equal when Nd is much larger than the intrinsic carrier concentration, ni. It would be beneficial to also consider the temperature and other factors that may affect the equilibrium concentrations.
 

FAQ: Question on donor concentration in thermal equilibrium

What is donor concentration in thermal equilibrium?

Donor concentration in thermal equilibrium refers to the concentration of impurity atoms in a semiconductor material that have donated electrons to the conduction band, resulting in an excess of free electrons in the material.

How is donor concentration in thermal equilibrium calculated?

Donor concentration in thermal equilibrium is typically calculated using the equation n = Ndexp(-Ed/kBT), where n is the electron concentration, Nd is the donor concentration, Ed is the donor ionization energy, kB is the Boltzmann constant, and T is the temperature in Kelvin.

What factors can affect donor concentration in thermal equilibrium?

The donor concentration in thermal equilibrium can be affected by changes in temperature, doping level, and the presence of other impurities or defects in the material.

What is the significance of donor concentration in thermal equilibrium?

Donor concentration in thermal equilibrium plays a crucial role in determining the electrical and optical properties of semiconductors. It also affects the performance of electronic devices such as transistors and diodes.

How does donor concentration in thermal equilibrium differ from equilibrium carrier concentration?

Donor concentration in thermal equilibrium specifically refers to the concentration of impurity atoms in a semiconductor material, while equilibrium carrier concentration refers to the total concentration of both electrons and holes in the material at thermal equilibrium.

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