Rashba effect due to the external electric field

In summary, the Rashba effect is a spin-orbit interaction effect that arises from the electron's perception of electric fields as magnetic fields. In more complicated structures and situations, such as a 2D structure perpendicular to an external electric field, the Rashba term appears due to the different contributions to the electric field, including the periodic crystal potential, surface potentials, and external electric field. This effect can be explained using the traditional hand waving argument, where a traveling electron perceives electric fields as magnetic fields, and in simpler cases, such as a lone Hydrogen atom, the electric field is entirely due to the nucleus.
  • #1
Nemanja989
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Hi, I am modeling structure that takes into account Rashba effect, and I am not sure what is the mechanism that causes Rashba effect to appear.

On wikipedia Rashba is described as spin-orbit interaction effect which appears because electron is orbiting around nucleus and electron see nucleus orbiting around from where we get effective magnetic field that further on interact with spin of the electron.

What confuses me is why Rashba appears after we apply external electric field on the structure? Does external field somehow polarize atoms in crystal structure and therefore electrons in conduction band "see" more clearly electric field of the nucleus from where we get Rashba effect? Or is it something else?

thanks in advance :)
 
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  • #2
Nemanja989 said:
On wikipedia Rashba is described as spin-orbit interaction effect which appears because electron is orbiting around nucleus and electron see nucleus orbiting around from where we get effective magnetic field that further on interact with spin of the electron.

Where does it say that? That is quite misleading.

Basically, one can use the traditional hand waving argument: a traveling electron will perceive electric fields as magnetic fields (which the electron spin can couple to). In the simplest case, a lone Hydrogen atom, the field is entirely due to the nucleus. This is the usual (atomic) spin-orbit interaction.

However, in more complicated structures and situations, you get several different contributions to the electric field (in addition to the nuclear field). There is, in principle, a periodic crystal potential, surface potentials, external electric field etc. For a 2D structure perpendicular to the electric field, the term due to the electric field is just called the Rashba term.
 

FAQ: Rashba effect due to the external electric field

1. What is the Rashba effect due to an external electric field?

The Rashba effect is a phenomenon in condensed matter physics where an external electric field induces a splitting of the spin-degenerate energy levels in a material. This effect was first described by Soviet physicist Yuli Rashba in 1959.

2. How does the Rashba effect arise in a material?

The Rashba effect arises from the spin-orbit coupling in a material, which is the interaction between the electron's spin and its motion through the crystal lattice. This coupling is enhanced by the presence of an external electric field, leading to the splitting of energy levels.

3. What are the potential applications of the Rashba effect?

The Rashba effect has potential applications in spintronics, which is the study and manipulation of electron spins for use in electronic devices. It can also be used to control the spin polarization of electrons in materials, which is important for quantum computing and other spin-based technologies.

4. Can the Rashba effect be observed in all materials?

No, the Rashba effect is typically only observed in materials with strong spin-orbit coupling, such as semiconductors and heavy metals. These materials have a high atomic number and complex crystal structure, which allows for strong spin-orbit interactions.

5. How can the Rashba effect be experimentally measured?

The Rashba effect is typically measured through techniques such as angle-resolved photoemission spectroscopy (ARPES) or spin-resolved scanning tunneling microscopy (STM). These methods allow for the detection of changes in the electronic structure and spin polarization induced by the external electric field.

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