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Is a reverse Schottky diode possible?
I understand the basics of the Schotkky barrier/rectifier commonly achieved by a metal/semiconductor interface.
Recently, it was suggested to me that a "reverse" Schottky junction is possible if the metal is placed against a fully depleted, high carrier concentration semiconductor. Further, this would result in a metal accelerating and reducing recombination of holes for instance in a p-type semiconductor.
I'm skeptical but lack the physics skills for rebuttal.
Any help?
Thanks!
I understand the basics of the Schotkky barrier/rectifier commonly achieved by a metal/semiconductor interface.
Recently, it was suggested to me that a "reverse" Schottky junction is possible if the metal is placed against a fully depleted, high carrier concentration semiconductor. Further, this would result in a metal accelerating and reducing recombination of holes for instance in a p-type semiconductor.
I'm skeptical but lack the physics skills for rebuttal.
Any help?
Thanks!