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Mr_klein
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Homework Statement
we look at a silicum n++ p+ n transistor. given:
NE= 1,0×1018 cm–3;
NB= 2,0×1016 cm–3;
NC = 2,0×1015 cm–3;
here E stands for the emitter, B for the basis and C for the collector
Homework Equations
a. calculate the distance in eV from the fermi-level to EFi for the emitter the base and the collector.
b. how large is the electron concentration at thermal equilibrium in the emitter, base and collectro
c. how large is the hole concentration at thermal equilivirum in the emitter, base and collector
The Attempt at a Solution
I don't really understand this yet, I've tried looking in my books and online but i don't understand what the N stands for. i found something like a doping concentration. and that Efi is the intrinstic fermi level but i don't know how to answer the questions. can someone please help. or at least point me to something i could read that would help.
thanks