- #1
georgefrenk
- 2
- 0
I am using Multisim software and I am comparing my calculated voltage gain with the one, done by Multisim.
Why is calculated Av ( -478.8 mV) much different from the one in simulation ( -990 mV) ?
I see the calculated is approx. half size of simulated.
I tried using virtual transistor instead of 2N2222A, but Ic and voltage gain inside Multisim stays almost the same.
And tried also moving PR2 voltage probe directly on 4 V power source.Ic is seen as measured on schematic
Rc is seen on schematic
Vt is default 25 mV at room temparature
gm represents transconductancegm = Ic / Vt = Ic / 25 mV
gm = 1.71 mA / 25 mV
gm = (0.0684 / 1000) S (Siemens)
gm = 0.0000684 S (Siemens)
Av = Rc * -gm
Av = 7000 ohm * -0.0000684 S
Av = -0.4788 V (volts)
Av = -478.8 mV
Why is calculated Av ( -478.8 mV) much different from the one in simulation ( -990 mV) ?
I see the calculated is approx. half size of simulated.
I tried using virtual transistor instead of 2N2222A, but Ic and voltage gain inside Multisim stays almost the same.
And tried also moving PR2 voltage probe directly on 4 V power source.Ic is seen as measured on schematic
Rc is seen on schematic
Vt is default 25 mV at room temparature
gm represents transconductancegm = Ic / Vt = Ic / 25 mV
gm = 1.71 mA / 25 mV
gm = (0.0684 / 1000) S (Siemens)
gm = 0.0000684 S (Siemens)
Av = Rc * -gm
Av = 7000 ohm * -0.0000684 S
Av = -0.4788 V (volts)
Av = -478.8 mV