Solid State Physics- Finding concentration of donor atoms (Nd)

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To determine the concentration of donor atoms (Nd) in silicon at 300K with a known acceptor concentration (Na = 5*10^15 cm-3) and a Fermi level 0.215 eV below the conduction band, the intrinsic carrier concentration (ni) and hole concentration (po) must be considered. The equation (ni^2) = (Nd - 5*10^15) * po can be used, but Nd remains an unknown. The user seeks guidance on how to isolate and calculate Nd, as they are unsure of the next steps in solving the equation. Clarification on the relationship between ni, po, and Nd is needed to proceed with the calculation effectively.
Matt1234
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Homework Statement



Silicon at T= 300K contains acceptor atoms at a concentration of Na = 5*10^15 cm-3. Donor atoms are added forming an n-type compensated semiconductor such that the fermi level is 0.215 eV below the conduction band edge. What concentration of donor atoms are added?


Homework Equations


I have one equation byt i still have one unknown:





The Attempt at a Solution



here is what i have:
(ni^2) = (Nd- 5*10^15) * po
 
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where ni is the intrinsic carrier concentration and po is the hole concentration. Nd is the donor atoms added, but I don't know what this is. I'm not sure how to proceed. Any help would be much appreciated. Thank you!
 

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