Spherical Cavity in Dielectric Subject to Uniform Field

In summary, the conversation discusses the polarization charge on the surface of a spherical cavity and the corresponding field strength at the center. It also explores the relationship between the polarization charge density and the field strength in a uniform dielectric. The answer to the problem is given, but the individual is unsure about an extra term in their equation for the field strength inside the cavity. They are seeking clarification on their mistake.
  • #1
CaptainMarvel
13
0

Homework Statement



The polarization charge on the surface of a spherical cavity is [tex] - \sigma_e cos(\theta) [/tex] at a point whose radius vector from the centre makes an angle [tex] \theta [/tex]with a given axis Oz. Prove that the field strength at the centre is [tex] \frac {\sigma_e}{3 \epsilon_o} [/tex] parallel to Oz.

If the cavity is in a uniform dielectric subject to a field of strength [tex] E_o [/tex] parallel to the direction [tex] \theta = 0 [/tex], show that [tex] \sigma_e = \frac {3 E_o \epsilon_o ( \epsilon_r -1)} {1 + 2 \epsilon_r} [/tex] where [tex] \epsilon_r [/tex] is the relative permittivity of the dielectic. Verify that that this gives the correct value for the field strength at the centre of the cavity [tex] E = \frac {3 \epsilon_r E_o} {1 + 2 \epsilon_r}[/tex] and note that [tex] \sigma_e [/tex] is not simply [tex] ( \epsilon_r - 1 ) \epsilon_o E_o [/tex] because of the distortion of the field in the dielectric caused by the presence of the cavity.




The Attempt at a Solution



The first part of the question is no problem and deriving the field strength in the center which it asks you to verify using boundary conditions etc. etc. is no problem.

However polarization charge density = [tex] P . \hat{n} = - P cos( \theta ) [/tex] which is the form of what's given at the beginning of the question leading to [tex] \sigma_e = P [/tex]

Therefore:

[tex] P = ( \epsilon_r - 1 ) \epsilon_o E [/tex]

Subbing in my equation for field inside:

[tex] P = ( \epsilon_r - 1 ) \epsilon_o \frac {3 \epsilon_r E_o} {1 + 2 \epsilon_r}[/tex]

Which is the answer they want, apart from I have an extra [tex] \epsilon_r [/tex] term in the numerator.

Any ideas?

Many thanks in advance.
 
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  • #2
When I say 'my equation for field inside' I mean:

[tex] E = \frac {3 \epsilon_r E_o} {1 + 2 \epsilon_r} [/tex]

as verified in the question.

Thanks everyone.
 
  • #3
Please can somebody give me some idea as to where I'm going wrong?

:-(
 

FAQ: Spherical Cavity in Dielectric Subject to Uniform Field

What is a spherical cavity in a dielectric?

A spherical cavity in a dielectric is a spherical space within a material that has different electrical properties than the surrounding material. The cavity can be filled with a different substance or can be a vacuum.

What is a uniform field?

A uniform field is a type of electric field where the strength and direction of the field is the same at every point within the field. This means that the field lines are evenly spaced and parallel to each other.

How does a spherical cavity in a dielectric behave in a uniform field?

A spherical cavity in a dielectric will experience a force due to the uniform field. The direction and magnitude of this force will depend on the dielectric constant of the material in the cavity and the strength of the field.

How is the behavior of a spherical cavity in a dielectric related to electric potential?

The behavior of a spherical cavity in a dielectric can be described using the concept of electric potential. The potential inside the cavity will be different from the potential in the surrounding material, and this difference in potential will determine the movement of charges within the cavity.

What are some real-life applications of a spherical cavity in a dielectric subject to a uniform field?

Spherical cavities in dielectrics are commonly used in devices such as capacitors, where they can store charge and energy. They are also used in particle accelerators to create and control electric fields, and in medical imaging techniques such as MRI machines.

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