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A semiconductor material has an intrinsic carrier concentration of 5.6 x 10^14 m^-3 at 300K.
What is the electron concentration when such a semiconductor is p doped with an acceptor concentration Na = 3.9 x 10^18 m-3.
I have no idea how to approach this question without a value for the energy band gap. Could someone point me in the right direction? Thanks.
What is the electron concentration when such a semiconductor is p doped with an acceptor concentration Na = 3.9 x 10^18 m-3.
I have no idea how to approach this question without a value for the energy band gap. Could someone point me in the right direction? Thanks.