Concentrate on finding the value for the ##n_i## rather than its subscript. You know the sequence of integers that the n's are drawn from, so you can later match the value of n to a subscript.cindy1234 said:chemistry text - has only one example of an electron transition - that is calculate the wavelength in nm of the photon emitted when an electron transitions from the n = 4 state to the n = 2 state in a hydrogen atom - which i can do but i don't know how to change this to get the n subscript i
They started with the Rydberg formula (which your chemistry text should have). Your problem statement states that the electron transitions to the ground state, giving you one of the n values. The other n value is then the unknown that you're looking for.tried changing to m and 1 / 9.314 x 10^-8 and get 1.074 x 10^7 as an answer
found this on internet
change nm to m 93.14 nm to 9.314 x 10^-8 m
1 - 1 / exponent 2 n subscript 2 = 0.9787 (how did they get this)
1/ exponent 2 n subscript 2 = 0.02128 (how did they get this)
n exponent 2 subscript 2 = 46.98 (how did they get this)
n subscript 2 = 6.85 rounded to 7 (square root of 46.98)
Both sides were inverted:cindy1234 said:found the following on the internet
wavelength = 430 nm
find n i
(1/n 1 ^2 - 1 / n 2 ^2) = 2325581 / (1.09677581 x 10^7)
(1/2^2 - 1/n2^2) = 0.212038
1/n2^2 = 0.25 - 0.212038
n2^2 = 26.342 (only part i don't understand) (only need help with this part)
The value of ni for an electron, also known as the intrinsic carrier concentration, varies depending on the material. For silicon, the most commonly used semiconductor material, the value is approximately 1.5 x 10^10 per cubic centimeter at room temperature.
Ni is important because it represents the balance between the number of electrons and holes in a material. At this equilibrium point, the material is considered intrinsic, meaning it has no impurities. This is necessary for proper functioning of semiconductor devices.
The value of ni increases with temperature, as more thermal energy is available to generate electron-hole pairs. This is known as the temperature dependence of ni and is an important factor in the performance of semiconductor devices.
The value of ni can be affected by the type and concentration of impurities in a material, as well as the material's crystal structure and temperature. It can also be controlled through processes such as doping, which introduces impurities to modify the material's conductivity.
The value of ni can be determined experimentally through various methods, such as Hall effect measurements, optical absorption spectroscopy, and capacitance-voltage measurements. These techniques can provide information about the material's carrier concentration and mobility, which can then be used to calculate the value of ni.