- #1
tim9000
- 867
- 17
Apologies upfront, I have a backlog of PF threads I have created not replied to...I will endeavour to do so when I can.
So I've read that IGBTs are more efficient than MOSFETs for lower than 20kHz frequencies (and are capable of use for high voltage rating and better performance than ordinary bipolar transistors).
However, the datasheet of the IGBTs that I bought states that the low saturation collector emitter voltage is 2V at 25A. And I read that on the internet: "The main advantages of an IGBT over a power MOSFET are the much lower on-state voltage drops due to conductivity modulation. This feature translates to a smaller chip size compared to that for a MOSFET for the same current and voltage ratings."
I don't really understand what conductivity modulation is (is this wider ability to control the resistance of the emitter to collector with the gate voltage?), but I also thought that MOSFETs were of a similar conductive voltage drop to diodes, ~0.7V.
If this is true, it would seem to me that MOSFETs would have a lower condition loss.
Can anyone shed some light on this? Also, if I was to control a simple ON-OFF 24V DC load using either, which one would I choose?
Thank you
So I've read that IGBTs are more efficient than MOSFETs for lower than 20kHz frequencies (and are capable of use for high voltage rating and better performance than ordinary bipolar transistors).
However, the datasheet of the IGBTs that I bought states that the low saturation collector emitter voltage is 2V at 25A. And I read that on the internet: "The main advantages of an IGBT over a power MOSFET are the much lower on-state voltage drops due to conductivity modulation. This feature translates to a smaller chip size compared to that for a MOSFET for the same current and voltage ratings."
I don't really understand what conductivity modulation is (is this wider ability to control the resistance of the emitter to collector with the gate voltage?), but I also thought that MOSFETs were of a similar conductive voltage drop to diodes, ~0.7V.
If this is true, it would seem to me that MOSFETs would have a lower condition loss.
Can anyone shed some light on this? Also, if I was to control a simple ON-OFF 24V DC load using either, which one would I choose?
Thank you