- #1
CaptainMarvel1899
- 28
- 3
Assume we have a diode closed circuit.We connect the p type region of the diode to the positive terminal of the battery(cathode).We connect the n type region of the diode to the negative terminal of the battery(anode).The voltage of the battery is 0.3V .The diode%s intristic se miconductor is silicon.Here is my issue . The net force moves the electrons from the n type to the p type.But because there is not enough voltage the valence electrons of silicon have a slight propability to overcome the band gap and become free charge carriers.But if they don't become become free charge carriers they will form bonds with B-atoms because charges do move and fill Boron holes.And this would result to a bigger potential energy of the system.What am I missing?