Intrinsic semiconductor, carrier concentration

AI Thread Summary
The discussion centers on calculating the chemical potential and charge carrier concentration in an intrinsic semiconductor with given energy band parameters. The calculated chemical potential is approximately 5.76 eV, while the derived carrier concentration is around 1.45 x 10^21 m^-3, which differs significantly from the expected value of 3.9 x 10^23 m^-3. Participants identify potential discrepancies in the equations used, particularly regarding the factor of 2 in the denominator related to effective masses. The conversation concludes with a consensus that the methodology is correct, despite the differing numerical results. The issue appears to be resolved with a deeper understanding of the calculations involved.
Incand
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Homework Statement


An intrinsic semiconductor with a direct gap have valance band ##\epsilon_k = E_v-b|k|^2## and conduction band ##\epsilon_k = =E_c+a|k|^2##, with ##E_v=6.0##eV, ##E_c = 5.5eV##, ##a=5.0eV\cdot Å^2##, and ##b=3.0eV\cdot Å^2##.
Calculate the chemical potential ##\mu## and the number of charge carriers ##n+p##.

Homework Equations


Effective mass:
##m^*_e = \frac{\hbar^2}{2a}##
Intrinsic semiconductor ##n=p##:
##p=n = \sqrt{pn} = \frac{1}{\sqrt{2}}\left( \frac{k_BT}{\pi \hbar^2}\right)^{3/2}(m_e^* m_n^*)^{3/4}e^{-E_g/(2k_BT)}##
##e^{(2\mu-E_g)/k_BT}= \left( \frac{m_h^*}{m_e^*}\right)^{3/2}##
##\mu = \frac{E_g}{2}+\frac{3}{4}k_BT\ln \frac{m_h^*}{m_e^*}##
At ##T\approx 300##, ##k_BT \approx 25.7meV##.

The Attempt at a Solution


For the first part I get the correct answer just plugging in the numbers, with ##E_g = E_c-E_v = 0.5##eV and then shifting the energy by ##E_V## and noting that ##m_h/m_e=a/b##
##\mu = 5.5+0.25+25.7/1000 \cdot ln(5/3) \approx 5.76eV##.

For the second part we can rewrite
##n=\frac{1}{\sqrt{2}}\left( \frac{k_BT}{2\pi \sqrt{ab}}\right)^{3/2}e^{-E_g/(2k_BT)}##
plugging in the numbers here we get ##n \approx 1.45\cdot 10^{-9} Å^{-3}= 1.45\cdot 10^{21} m^{-3}##. However the answer claims I should get ##3.9\cdot 10^{23}m^{-3}##.

Any obvious error I'm doing or is the answer incorrect here? The factor in front can change a bit from simply changing ##k_BT## and the answer may be by a factor 2 as well if they mean ##n+p## but the factor of 100 is troubling.

Here is the numerical calculation in matlab
Code:
eg=0.5;
kbt = 25.7e-3;
sqab=sqrt(15);
c=1e30*(kbt/(2*pi*sqab))^(3/2)*exp(-eg/kbt/2)/sqrt(2)
 
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Incand said:
For the second part we can rewrite$$
n=\frac{1}{\sqrt{2}}\left( \frac{k_BT}{2\pi \sqrt{ab}}\right)^{3/2}e^{-E_g/(2k_BT)}$$
Where did the "2 π" in the denominator come from? I got just π. This will change the value from 1.45 to about 4 but I agree with you that the power of 10 is +21 given your numbers.
 
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kuruman said:
Where did the "2 π" in the denominator come from? I got just π. This will change the value from 1.45 to about 4 but I agree with you that the power of 10 is +21 given your numbers.
It's from the 2 in the effective masses ##\left( \frac{k_BT}{\pi \hbar^2}\right)^{3/2}(m_e^*m_h^*)^{3/4} =\left( \frac{k_BT}{\pi \hbar^2}\right)^{3/2}\left(\frac{\hbar^2 \hbar^2}{(2a)(2b)}\right)^{3/4}=\left( \frac{k_BT}{\pi \hbar^2}\right)^{3/2}\left(\frac{\hbar^2}{2\sqrt{ab}}\right)^{3/2}##.
Anyway I take your answer as confirmation that I'm using the correct method so despite the answer being different I think it can be considered solved! Thanks for looking it over!
 
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